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| Schottky Barrier Diodes (SBD) MA3X704D, MA3X704E Silicon epitaxial planar type For switching circuits For wave detection circuit I Features * Two MA3X704As are contained in one package * Low forward rise voltage (VF) and satisfactory wave detection efficiency () * Small tmperature coefficient of forward characteristic * Extremely low reverse current IR 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 1.5 + 0.2 Unit : mm 0.65 0.15 + 0.25 - 0.05 0.95 1.9 0.2 1 3 2 0.95 1.45 Parameter Reverse voltage (DC) Peak forward current Forward current (DC) MA3X704D/E Single Double* Single Double* Symbol VR IFM IF Tj Tstg Rating 30 150 110 30 20 125 -55 to +125 Unit V mA MA3X704D MA3X704E JEDEC : TO-236 1 Cathode Anode EIAJ : SC-59 2 Cathode Anode Mini Type Package (3pin) 3 Anode Cathode mA C C Marking Symbol * MA3X704D : M2P * MA3X704E : M2R Internal Connection 1 3 2 2 1 3 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF Conditions D Min Typ 0 to 0.1 I Absolute Maximum Ratings Ta = 25C 0.1 to 0.3 0.4 0.2 1.1 0.8 E Max 1 0.4 1.0 1.5 1.0 Unit A V V pF ns Detection efficiency 65 0.16 - 0.06 + 0.2 - 0.1 + 0.1 0.4 - 0.05 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3X704D, MA3X704E IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 103 IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 102 IF = 30 mA Ta = 125C Forward voltage VF (V) Reverse current IR (A) 10 0.6 10 mA 0.4 10 75C 1 1 25C 10-1 10-1 0.2 1 mA 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3 f = 1 MHz Ta = 25C IR T a 103 Terminal capacitance Ct (pF) 102 2 Reverse current IR (A) VR = 30 V 3V 1V 10 1 1 10-1 0 0 5 10 15 20 25 30 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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